Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits

Experimental measurement of the effect of copper through-silicon via diameter on stress buildup using synchrotron-based X-ray source

In this work, the effect of copper through-silicon via (TSV) interconnect diameter on stress buildup in Cu TSVs was experimentally determined using a synchrotron-based X-ray microdiffraction technique. A single chip with different Cu TSV diameters (3, 5, and 8 lm), all having the same depth and processing conditions was studied. Prior to the measurements, the chip was annealed at 420 C (30 min)...

Characterization of thermal stresses and plasticity in through-silicon via structures for three-dimensional integration

Through-silicon via (TSV) is a critical element connecting stacked dies in three-dimensional (3D) integration. The mismatch of thermal expansion coefficients between the Cu via and Si can generate significant stresses in the TSV structure to cause reliability problems. In this study, the thermal stress in the TSV structure was measured by the wafer curvature method and its unique stress charact...

In-situ microscale through-silicon via strain measurements by synchrotron x-ray microdiffraction exploring the physics behind data interpretation

Optimization of Non-volatile Memory Cell and Energy Consumption in Robot Systems by Synthesized Silicon Nanoparticles via Electrical Discharge

In this paper, we propose to optimize manufacturing methods of memory cells by produced silicon nanoparticles via electrical spark discharge of silicon electrodes in water to reduce the energy consumption for low power applications. The pulsed spark discharge with the peak current of 60 A and a duration of a single discharge pulse of 60 µs was used in our experiment. The structure, morphology, ...

Micro-Raman spectroscopy and analysis of near-surface stresses in silicon around through-silicon vias for three-dimensional interconnects

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